Publications

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

Olson, B.V.; Grein, C.H.; Kim, Jin K.; Kadlec, Emil A.; Klem, John F.; Hawkins, Samuel D.; Shaner, Eric A.

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1 × 10 - 26 cm6/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K-80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K · p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. The experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.