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Anomalous carrier-induced dispersion in semiconductor quantum dots

Schneider, H.C.; Chow, Weng W.; Smowton, P.M.; Pearce, E.J.; Koch, S.W.

The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.