Publications

AlGaN composition dependence of the band offsets for epitaxial Gd2O3/AlxGa12xN (0 &lex &le0.67) heterostructures

Ihlefeld, Jon I.; Brumbach, Michael T.; Allerman, A.A.; Wheeler, David R.; Atcitty, Stanley A.

Gd2O3 films were prepared on (0001)-oriented AlxGa1-xN (0≤x≤0.67) thin film substrates via reactive molecular-beam epitaxy. X-ray diffraction revealed that these films possessed the cubic bixbyite structure regardless of substrate composition and were all 111-oriented with in-plane rotations to account for the symmetry difference between the oxide film and nitride epilayer. Valence band offsets were characterized by X-ray photoelectron spectroscopy and were determined to be 0.41±0.02eV, 0.17±0.02eV, and 0.06±0.03eV at the Gd2O3/AlxGa1-xN interfaces for x=0, 0.28, and 0.67, respectively.