Publications
A critical implanted Cl concentration for pit initiation on aluminum thin films
The pitting potential of pure aluminum thin films in 50 mM K2 S O4 was measured as a function of implanted Cl fluence. Samples were implanted with 35 keV Cl+ at room temperature using fluences from 2.25× 1016 to 3.25× 1016 ions cm-2 in increments of 0.25× 1016. An empirical relationship between pitting potential and fluence was found which suggests a critical Cl concentration in the oxide is necessary for pit initiation. No correlation between pitting potential and the measured Cl concentration or distribution in the metal was found. © 2006 The Electrochemical Society. All rights reserved.