Publications

A CMOS Compatible, Forming Free TaO_x ReRAM

Stevens, James E.; Mickel, Patrick R.; Hughart, David R.; Marinella, Matthew J.

Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. Here, we demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x10⁵ cycle endurance.