Technology: High-temperature Silicon Carbide (SiC) Power Module
Developers:
- Arkansas Power Electronics International, Inc.
- Univ. of Arkansas
- Rohm Co., Ltd.
- Sandia National Laboratories
- U.S. DOE – Office of Electricity, Energy Storage Program
The High-temperature Silicon Carbide (SiC) Power Module is a high-temperature 250°C power module implementing silicon carbide power transistors and integrated high-temperature silicon on insulator (HTSOI) gate driver to reduce system electrical loss by less than 50 percent.
Power electronics modules are the core components of all power electronics systems. In essence, power electronics systems convert electrical energy from one form (provided by a source) into another form (consumed by a load). They are required to drive electric motors (such as those for electric and hybrid vehicles), convert energy from renewable sources (i.e., solar arrays or wind generators), and provide power for a wide variety of electronics and electronic systems (DC power supplies and inverters).
The high-temperature silicon carbide power module is the world’s first commercial high-temperature (250°C) silicon carbide-based power electronics module. The 50 kW (kilowatt) (1200 V (volt) /150 A (ampere) peak) silicon carbide (SiC) power modules are rated up to 250°C junction temperature and integrate high-temperature gate drivers.
For more information, download the factsheet (PDF, 2.8 mb).