Denis Mamaluy

Cognitive & Emerging Computing

Author profile picture

Cognitive & Emerging Computing

dnmamal@sandia.gov

My older (pre-2013) publications and CV

(505) 844-2054

Sandia National Laboratories, New Mexico
 P.O. Box 5800
 Albuquerque, NM 87185-1322

Biography

The CMOS technology is famously approaching its scaling limit: within the next decade or so, nano-scale FET transistors will reach the sub 5-nm physical gate lengths, at which point any further reduction of their sizes will likely become impractical and even impossible due to the thermal fluctuation noise. There are beyond-CMOS and non-charge based alternatives, some of which may be scaled below the 5-nm gate length and possibly down to atomic sizes. In any case, at that point the foreseeable human scientific and technological capabilities will reach the ultimate scaling limit for the elementary logic and memory device size.


In my research I am trying to answer the following questions:

  • What are the corresponding limits of computation?
  • How much computing can we actually perform and how much information we can actually store with 1 kg of non-exotic matter (i.e. far, far below Bekenstein bound)?
  • Which device-architecture paradigms can allow us to continue increasing FLOPS/kg ratio after the CMOS scaling limit is reached?
  • Can this increase still follow the exponential (“new Moore’s law”) trend?

If you like to discuss these and other (e.g. digital physics) fascinating subjects or have an idea about a potential CMOS replacement ­and would like to test it via computer simulation – please give me a call or send me an email.

Education

  • B. Verkin Institute for Low Temperature Physics & Engineering,
  • Ph.D. in Physics and Mathematics, Kharkov, Ukraine, November 2000.
  • Kharkov State University, Physics Department, division of theoretical physics,
  • M.S. in Physics (with honors), Kharkov, Ukraine, June 1997.
  • UNESCO at Kharkov University,
  • M.A. in Philosophy of Communications and Management, Kharkov, Ukraine, May 1997.

Appointments

  • 2012-pres.: Senior R&D scientist and engineer, Sandia National Laboratories
  • 2006-2011: Research professor, ECEE, ASU
  • 2005-2006: Faculty research associate, ECEE, ASU
  • 2002-2005: Research associate, Department of Electrical Engineering, ASU
  • 2000-2002: Post-doctorate fellow, Walter Schottky Institute, Technische Universität München, Munich, Germany

Publications

Denis Mamaluy, Juan Mendez Granado, (2022). Revealing conductivity of p-type delta layer systems for novel computing applications https://doi.org/10.2172/1887942 Publication ID: 80214

Denis Mamaluy, Juan Mendez Granado, Xujiao Gao, Shashank Misra, (2021). Revealing quantum effects in highly conductive δ-layer systems Communications Physics https://doi.org/10.1038/s42005-021-00705-1 Publication ID: 79264

Juan Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions International Conference on Simulation of Semiconductor Processes and Devices, SISPAD https://doi.org/10.1109/sispad54002.2021.9592565 Publication ID: 75873

Juan Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) https://doi.org/10.1109/sispad54002.2021.9592565 Publication ID: 79465

Christopher Allemang, Evan Anderson, Andrew Baczewski, Ezra Bussmann, Robert Butera, DeAnna Campbell, Quinn Campbell, Stephen Carr, Esther Frederick, Phillip Gamache, Xujiao Gao, Albert Grine, Mathew Gunter, Connor Halsey, Jeffrey Ivie, Aaron Katzenmeyer, Andrew Leenheer, William Lepkowski, Tzu-Ming Lu, Denis Mamaluy, Juan Mendez Granado, Luis Peña, Scott Schmucker, David Scrymgeour, L. Tracy, George Wang, Dan Ward, Steve Young, (2021). FAIR DEAL Grand Challenge Overview https://doi.org/10.2172/1854733 Publication ID: 75955

Juan Mendez Granado, Denis Mamaluy, (2021). Quantum Effects of Unintentional Dopants in delta-layer Tunnel Junctions https://doi.org/10.2172/1867275 Publication ID: 79464

Juan Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Conductive Properties of Tunnel Junctions in Semiconductor delta-layer Systems https://doi.org/10.2172/1867274 Publication ID: 78488

Juan Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Framework for Highly Conductive delta-layer Systems https://doi.org/10.2172/1866559 Publication ID: 78327

Xujiao Gao, L. Tracy, Evan Anderson, DeAnna Campbell, Jeffrey Ivie, Tzu-Ming Lu, Denis Mamaluy, Scott Schmucker, Shashank Misra, (2020). Modeling assisted room temperature operation of atomic precision advanced manufacturing devices International Conference on Simulation of Semiconductor Processes and Devices, SISPAD https://www.osti.gov/servlets/purl/1819257 Publication ID: 74763

Juan Mendez Granado, Denis Mamaluy, Xujiao Gao, Evan Anderson, DeAnna Campbell, Jeffrey Ivie, Tzu-Ming Lu, Scott Schmucker, Shashank Misra, (2020). Quantum Transport in Si:P δ-Layer Wires 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) https://doi.org/10.23919/sispad49475.2020.9241610 Publication ID: 74626

Juan Mendez Granado, Denis Mamaluy, Xujiao Gao, Evan Anderson, DeAnna Campbell, Jeffrey Ivie, Tzu-Ming Lu, Scott Schmucker, Shashank Misra, (2020). Quantum transport in Si:P δ-layer wires https://www.osti.gov/servlets/purl/1820274 Publication ID: 74794

Xujiao Gao, L. Tracy, Evan Anderson, DeAnna Campbell, Jeffrey Ivie, Tzu-Ming Lu, Denis Mamaluy, Scott Schmucker, Shashank Misra, (2020). Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices https://doi.org/10.23919/SISPAD49475.2020.9241642 Publication ID: 74647

Xujiao Gao, Denis Mamaluy, William Lepkowski, Steve Young, (2020). FAIR DEAL GC Thrust 2: APAM Modeling https://www.osti.gov/servlets/purl/1808429 Publication ID: 74069

Denis Mamaluy, Juan Granado, Xujiao Gao, (2019). Quantum transport in APAM wires https://www.osti.gov/servlets/purl/1643480 Publication ID: 66700

Xujiao Gao, Denis Mamaluy, Evan Anderson, DeAnna Campbell, Albert Grine, Aaron Katzenmeyer, Tzu-Ming Lu, Scott Schmucker, L. Tracy, Daniel Ward, Shashank Misra, (2019). Modeling Assisted Atomic Precision Advanced Manufacturing (APAM) Towards Room Temperature Operation https://www.osti.gov/servlets/purl/1643549 Publication ID: 66586

Xujiao Gao, Denis Mamaluy, Michael Goldflam, (2019). FAIR DEAL GC Thrust 2: APAM modeling https://www.osti.gov/servlets/purl/1646191 Publication ID: 66073

Xujiao Gao, Denis Mamaluy, L. Tracy, Daniel Ward, Ezra Bussmann, (2019). Modeling assisted APAM towards room temperature operation https://www.osti.gov/servlets/purl/1700540 Publication ID: 66031

Denis Mamaluy, Juan Mendez Granado, Xujiao Gao, (2019). Quantum Transport in APAM Wires: Consequences of the novel electronic structure of Si:P δ-layered systems https://www.osti.gov/servlets/purl/1700543 Publication ID: 66034

Denis Mamaluy, Xujiao Gao, Leon Maurer, (2019). FAIR DEAL GC Thrust #2: APAM Modeling https://www.osti.gov/servlets/purl/1592213 Publication ID: 64267

Lawrence Musson, Gary Hennigan, Xujiao Gao, Denis Mamaluy, (2016). RAMSES / Charon Progress and Code Collaboration Overview https://www.osti.gov/servlets/purl/1410250 Publication ID: 47904

Denis Mamaluy, Xujiao Gao, Brian Tierney, (2016). Fully-Coupled Thermo-Electrical Modeling and Simulation of Transition Metal Oxide Memristors https://doi.org/10.2172/1331433 Publication ID: 47603

David Hughart, Xujiao Gao, Denis Mamaluy, Matthew Marinella, Patrick Mickel, (2016). Power signatures of electric field and thermal switching regimes in memristive SET transitions Journal of Physics. D, Applied Physics https://doi.org/10.1088/0022-3727/49/24/245103 Publication ID: 80707

Denis Mamaluy, Xujiao Gao, Matthew Marinella, (2016). Comprehensive Assessment of Oxide Memristors as Post-CMOS Memory and Logic Devices https://www.osti.gov/servlets/purl/1368819 Publication ID: 50206

Xujiao Gao, Denis Mamaluy, E. Cyr, M. Marinella, (2016). Comprehensive assessment of oxide memristors as post-CMOS memory and logic devices ECS Transactions https://doi.org/10.1149/07203.0049ecst Publication ID: 48851

Brian Tierney, Harold Hjalmarson, Michael McLain, David Hughart, Matthew Marinella, Denis Mamaluy, (2015). Transport Physics in Thin-Film Oxides: From Capacitors to Memristors https://www.osti.gov/servlets/purl/1331866 Publication ID: 46503

Xujiao Gao, Denis Mamaluy, Patrick Mickel, Matthew Marinella, (2015). Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors ECS Transactions (Online) https://doi.org/10.1149/06905.0183ecst Publication ID: 44343

Marie Arrowsmith, Daniel Guildenbecher, Denis Mamaluy, (2015). LDRD @ SNL May 2015 https://doi.org/10.2172/1184074 Publication ID: 43800

Denis Mamaluy, Xujiao Gao, (2015). The fundamental downscaling limit of field effect transistors Applied Physics Letters https://doi.org/10.1063/1.4919871 Publication ID: 42744

Brian Tierney, Harold Hjalmarson, Michael McLain, Denis Mamaluy, (2015). The Role of Joule Heating and Defect Chemistry in Memristor Modeling https://www.osti.gov/servlets/purl/1241114 Publication ID: 42353

Xujiao Gao, Denis Mamaluy, Patrick Mickel, Matthew Marinella, (2015). Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Oxide Memristors https://www.osti.gov/servlets/purl/1240110 Publication ID: 42239

Xujiao Gao, Denis Mamaluy, P. Mickel, M. Marinella, (2015). Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors ECS Transactions https://doi.org/10.1149/06905.0183ecst Publication ID: 46053

Denis Mamaluy, Xujiao Gao, Brian Tierney, (2014). The ultimate downscaling limit of FETs https://doi.org/10.2172/1160288 Publication ID: 38989

Matthew Marinella, Patrick Mickel, Andrew Lohn, David Hughart, Robert Bondi, Denis Mamaluy, Harold Hjalmarson, James Stevens, Seth Decker, Roger Apodaca, Brian Evans, James Aimone, Fredrick Rothganger, Conrad James, Erik Debenedictis, (2014). Development Characterization and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator https://doi.org/10.1149/06414.0037ecst Publication ID: 38905

Matthew Marinella, Patrick Mickel, Andrew Lohn, David Hughart, Robert Bondi, Denis Mamaluy, Harold Hjalmarson, James Stevens, Seth Decker, Roger Apodaca, Brian Evans, James Aimone, Fredrick Rothganger, Conrad James, Erik Debenedictis, (2014). Development characterization and modeling of a TaOx ReRAM for a neuromorphic accelerator https://doi.org/10.2172/1241888 Publication ID: 38906

Xujiao Gao, Denis Mamaluy, (2014). Quantum Transport Simulation and Optimization of Below-6-nm Si FinFETs with HfSiON/SiO2 Gate Dielectrics https://www.osti.gov/servlets/purl/1496695 Publication ID: 37616

Xujiao Gao, Denis Mamaluy, Erik Nielsen, Ralph Young, Richard Muller, Nathaniel Bishop, Michael Lilly, Malcolm Carroll, (2013). Efficient self-consistent quantum transport simulator for quantum devices Journal of Applied Physics https://www.osti.gov/biblio/1121374 Publication ID: 31751

Xujiao Gao, Denis Mamaluy, Erik Nielsen, Richard Muller, Ralph Young, Nathaniel Bishop, Michael Lilly, Malcolm Carroll, (2013). Efficient Self-Consistent Quantum Transport Simulator for Quantum Well Devices https://www.osti.gov/servlets/purl/1080393 Publication ID: 33805

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Awards & Recognition

2022

Denis Mamaluy, Juan Pedro Mendez Granado, , Denis Mamaluy, FAIR DEAL Grand Challenge LDRD Project, Sandia National Laboratories , Sandia National Laboratories, Team A - INNOVATION, Divisions ESD - 5000 , May 3, 2022

2021

Denis Mamaluy, Juan Pedro Mendez Granado, , Denis Mamaluy, Recognized at D1K Tier Board, D1K Tier Board, Susan Seestrom, Recognized for https://www.nature.com/articles/s42005-021-00705-1 , October 11, 2021

2012

Denis Mamaluy, , Denis Mamaluy, Senior Member, IEEE, Senior Member is the highest professional grade of the IEEE for which a member may apply. It requires experience, and reflects professional accomplishment and maturity. Only 8% of IEEE 416,000 members have achieved this level., September 4, 2012