Cryogenic amplifiers for fast readout
Abstract not provided.
Publications
Readout and Characterization of a P Donor Qubit in 28Si
Abstract not provided.
Predicting the valley splitting of silicon quantum dots directly from a device layout
Abstract not provided.
Modeling open quantum system device operation with multivalley effective mass theory
Abstract not provided.
Fabrication and Trasnport in Counted Donor Devices using Top-Down Ion Implantation
Abstract not provided.
Electron Spin Resonance of a Phosphorous Donor Qubit in Enriched Silicon
Abstract not provided.
Electron Spin Resonance of a Phosphorous Donor Qubit in Enriched Silicon
Abstract not provided.
Few Electron Quantum Dot coupling to Donor Implanted Electron Spins
Abstract not provided.
Science and Engineering of Quantum Information Systems: Robust Devices and Operations
Abstract not provided.
The Quantum Computer Aided Design (QCAD) Framework for Quantum Device Modeling
Abstract not provided.
Gap protection and dynamical decoupling for reliable multi-qubit gates
Abstract not provided.
[Response to PRL referee request for more information]
Sandia journal manuscript; Not yet accepted for publication
Abstract not provided.
Efficient self-consistent quantum transport simulator for quantum devices
Journal of Applied Physics
Abstract not provided.
Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit
Nature Physics
Abstract not provided.
QCAD Simulation and Optimization of Semiconductor Quantum Dots
Journal of Applied Physics
Abstract not provided.
Efficient Self-Consistent Quantum Transport Simulator for Quantum Well Devices
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Dynamically corrected gates for singlet-triplet spin qubits with control-dependent errors
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
Distinguishing adiabaticity from relaxation in a Si double quantum dot charge qubit
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Results 51–75 of 109
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