Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.
Select one or more publication years and click "Update search results".
This list has already been filtered by scope and author.
SELECTED PUBLICATION YEARS
MATCHING PUBLICATION YEARS
ALL PUBLICATION YEARS
No matches found.
Select a document type
Select one or more document types and click "Update search results".
This list has already been filtered by scope and author.
SELECTED DOCUMENT TYPES
MATCHING DOCUMENT TYPES
ALL DOCUMENT TYPES
No matches found.
Search for an author
Search for a Sandian author by first name, last name, or initials. Click on the author's name to add them as an option, and then click "Update search results".
This list has already been filtered by scope and author.
SELECTED AUTHORS
MATCHING AUTHORS
ALL AUTHORS
No matches found.
Search for a research partner
Search for one or more research partners and click "Update search results".
This list has already been filtered by scope and author.
SELECTED RESEARCH PARTNERS
MATCHING RESEARCH PARTNERS
ALL RESEARCH PARTNERS
No matches found.
Search for a subject
Search for one or more subjects and click "Update search results".
This list has already been filtered by scope and author.