Publications

Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Jacobs, Benjamin W.; Ayres, Virginia A.; Stallcup, Richard S.; Hartman, Alan H.; Tupta, Mary A.; Baczewski, Andrew D.; Crimp, Martin C.; Halpern, Joshua H.; He, Maoqi H.; Shaw, Harry S.

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.