Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
(J. Y. Tsao S. Chowdhury M. A. Hollis D. Jena N. M. Johnson K. A. Jones R. J. Kaplar S. Rajan C. G. Van de Walle E. Bellotti C. L. Chua R. Collazo M. E. Coltrin J. A. Cooper K. R. Evans S. Graham T. A. Grotjohn E. R. Heller M. Higashiwaki M. S. Islam P. W. Juodawlkis M. A. Khan A. D. Koehler J. H. Leach U. K. Mishra R. J. Nemanich R. C. N. Pilawa‐Podgurski J. B. Shealy Z. Sitar M. J. Tadjer A. F. Witulski M. Wraback J. A. Simmons) (SAND2017-10150 J) Advanced Electronic Materials 4, 1600501 (2018).
This article reviews the materials, physics, device and application research opportunities and challenges associated with ultrawide-bandgap semiconductors.
Quantum-size-controlled photoelectrochemical fabrication of epitaxial InGaN quantum dots
(X Xiao, AJ Fischer, GT Wang, P. Lu, DD Koleske, ME Coltrin, JB Wright, S Liu, I Brener, GS Subramania, JY Tsao) (SAND2014-16995PE) Nano Lett. 14, 5616-5620 (2014).
We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching.
The World of Compound Semiconductors
This is a book started in 2002, worked on for about a year, then abandoned. Its intent was to have been to provide an integrated guide to the science, technology and applications of the compound III-V semiconductors. Its unique aspect was to have been its emphasis and organization around an objective database of the most highly-cited journal articles and U.S. patents in the field. Comments and avenues for its continuation are most welcome.
(MV Ramana Murty, D Xu, CC Lin, CL Shieh, JY Tsao, J Cheng, Appl Phys Lett 86, 061108, 2006)
Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
(CL Shieh, JY Tsao, US Patent 6,696,308, February 24 2004)
(JY Tsao, CL Shieh, PD Dapkus, J Yang, US Patent 6,594,294, July 15 2003)
Semiconductor Epitaxy: Science, Technology and Applications
40MB (July-November 1998) (SAND 2007-1800P)
This series of twelve lectures was given over four months at the Institute of Materials and Engineering (IMRE) in Singapore. The series began with an overview of materials and device families and properties, and of epitaxy growth techniques such as molecular beam epitaxy (MBE) and chemical-vapor deposition (CVD). Then, the science of epitaxy was discussed, including vapor, surface, thin film and bulk phenomena. Finally, the series ended with an overview of the technology and applications of epitaxy, with attention to particular III/V alloy systems as well as to manufacturing issues.
Materials Fundamentals of Molecular Beam Epitaxy
(Academic Press, 1993) and figures (SAND 2007-1801P)
This book gathers together the basic materials science principles that apply to MBE, and treats in great depth its most important aspects. Throughout, it makes use of thermodynamic and statistical calculations based on intuitive and physically motivated semi-empirical models.